Method for forming organic thin film
US9416283B2 · kind B2 · utility
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Key dates
| Filing date | Sep 15, 2014 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Sep 20, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/113
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A solution for forming an organic thin film wherein the total starting amount of metal surfactants (A) and (B) is 0.05 to 50 wt %, the amount of a hydroxyl group-containing compound generated with the progress of the hydrolysis reaction is 20 ppm to 6 wt %, and the amount of a compound (C) that can interact with the metal surfactant is 0.01 ppm to 8 ppm in terms of metal, relative to the total amount of the solution for forming an organic thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.