Tunneling magneto-resistive device with set/reset and offset straps
US9417297B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Feb 16, 2012 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Apr 4, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/09
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing device exhibits a tunneling magneto-resistive (TMR) effect, and changes electrical resistance in response to a magnetic field. A first current carrying conductor is positioned in proximity to the TMR sensing device, such that upon an application of a sufficient current, a magnetic field is generated. The magnetic field is sufficiently strong and properly oriented so as to cause a magnetization of a soft magnetic layer of the TMR sensing device, thereby causing a change of the TMR sensing device from one bi-stable state to another bi-stable state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.