Preventing programming errors from occurring when programming flash memory cells
US9417960B2 · kind B2 · utility
167Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2014 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M13/152
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Mis-programming of MSB data in flash memory is prevented by using ECC decoding logic on the flash die that error corrects the LSB values prior to the LSB values being used in conjunction with the MSB values to determine the proper reference voltage ranges. Error correcting the LSB page data prior to using it in combination with the MSB page data to determine the reference voltage ranges ensures that the reference voltage ranges will be properly determined and programmed into the flash cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.