Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond
US9418814B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jan 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.