Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor
US9418842B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Nov 28, 2012 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Nov 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.