Semiconductor device, related manufacturing method, and related electronic device

US9419005B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Lujun Zou · Shanghai, CN
• Yun Yang · Shanghai, CN
• Shaobin Li · Shanghai, CN
• Shengfen Chiu · Shanghai, CN

Key dates

• Filing date: Dec 22, 2014
• Grant date: Aug 16, 2016
• Expiry date: Dec 22, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/668

Abstract

A method for manufacturing a semiconductor device may include the following steps: preparing a stacked structure; processing the stacked structure to form a first gate structure and a preliminary structure; forming a dielectric material layer that covers at least the first gate structure; forming a dielectric layer using the dielectric material layer, such that a portion of the dielectric layer is positioned between the first gate structure and the preliminary structure; performing an annealing process on at least one of the dielectric material layer and the dielectric layer; processing the preliminary structure to form a second gate structure; and after the annealing process has been performed, forming a first metal silicide member on the second gate structure and/or forming a second metal silicide member on an active region associated with the second gate structure.