Semiconductor and optoelectronic devices
US9419031B1 · kind B1 · utility
83Cited by
353References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Aug 18, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated device, including: a first mono-crystal layer including a plurality of image sensor pixels and alignment marks; an overlaying oxide on top of the first mono-crystal layer; and a second mono-crystal layer overlaying the oxide, where the second mono-crystal layer includes a plurality of single crystal transistors aligned to the alignment marks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.