Integrated scintillator grid with photodiodes
US9419046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Feb 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.