Method for manufacturing semiconductor device
US9419142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2012 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Mar 27, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.