Nitride semiconductor structure
US9419160B2 · kind B2 · utility
2Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Feb 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor structure is provided. The nitride semiconductor structure includes a substrate, a SiC nucleation layer, a composite buffer layer and a nitride semiconductor layer. The SiC nucleation layer is located on the substrate. The composite buffer layer is located on the SiC nucleation layer. The nitride semiconductor layer is located on the composite buffer layer. Besides, the nitride semiconductor structure is an AlN free semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.