Method for producing a semiconductor element of a direct-converting x-ray detector

US9419169B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Fabrice Dierre · Granville, FR
• Peter Hackenschmied · Nuremberg, DE
• Matthias Strassburg · Erlangen, DE

Key dates

• Filing date: Aug 22, 2013
• Grant date: Aug 16, 2016
• Expiry date: Aug 22, 2034

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C18/1648
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A production method of a semiconductor element of a direct-converting x-ray detector is disclosed, wherein at least one intermediate layer is applied to a semiconductor layer and at least one contact layer is applied to an exposed intermediate layer by chemically currentless deposition of a contact material from a solution in each instance. The materials for the individual layers are selected such that the electrochemical potential of the materials of the at least one intermediate layer is greater than the electrochemical potential of at least one element of the semiconductor layer and the electrochemical potential of the contact material of the contract layer is greater than the electrochemical potential of the materials of the intermediate layers. Semiconductor elements produced in accordance with the method, an x-ray detector with semiconductor elements, an x-ray system with an x-ray detector and also a CT system with an x-ray detector are also disclosed.