Controlling the stoichiometry and doping of semiconductor materials
US9419170B2 · kind B2 · utility
1Cited by
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17Claims
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Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.