Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode
US9419174B2 · kind B2 · utility
7Cited by
6References
18Claims
0Family size
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Key dates
| Filing date | Sep 26, 2013 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Quantum dot light emitting diodes (QD-LEDs) are formed that are transparent and emit light from the top and bottom faces. At least one electrode of the QD-LEDs is a dielectric/metal/dielectric layered structure, where the first dielectric comprises metal oxide nanoparticles or polymer-nanoparticle blends and is 10 to 40 nm in thickness, the metal layer is 5 to 25 nm in thickness, and the second dielectric layer is a nanoparticulate, polymer-nanoparticle blend or continuous layer of 30 to 200 nm in thickness and is situated distal to the light emitting layer of the QD-LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.