Method and apparatus for producing single crystals composed of semiconductor material

US9422636B2 · kind B2 · utility

Assignee

• Forschungsverbund Berlin e.V. · DE

Inventors

• Helge Riemann · Königs Wusterhausen, DE
• Nikolai V. Abrosimov · Berlin, DE
• Joerg Fischer · Laboe, DE
• Matthias Renner · Königs Wusterhausen, DE

Key dates

• Filing date: Nov 23, 2010
• Grant date: Aug 23, 2016
• Expiry date: Nov 5, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1056
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for producing a single crystal of semiconductor material having material properties of a zone-pulled single crystal includes providing a vessel transmissive to high frequency magnetic fields and having a granulate of a granular semiconductor material disposed therein and a first conductor disposed externally thereto. A high frequency current is supplied to a planar inductor disposed above the vessel, the planar inductor having a turn and a slit as a current supply so as to produce an open melt lake on the granulate by a temperature field at a surface of the granulate produced by thermal power of the planar inductor and a heating action of the first inductor, the melt lake being embedded in unmelted material of the granular semiconductor material and not being in contact with a wall of the vessel. A single crystal is pulled form the melt lake of the semiconductor material upwards.