Non-volatile semiconductor memory device and writing method thereof
US9424934B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 18, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Feb 18, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device utilized to implement the writing of data by adding a predetermined voltage for assigning a word line to a non-volatile memory cell includes a control process or generating and outputting control data implementing a program code for writing data including a word line assignment command and voltage source assignment data, a writing controller decoding the control data and generating a control signal of the word line assignment command and a control signal of the voltage source assignment data, a voltage generation circuit generating several voltages for writing data, and a switch circuit selecting a voltage, corresponding to voltage source assignment data, among several voltages, according to the control signal of the word line assignment command and the control signal of voltage source assignment data and outputting the selected voltage to the word line corresponding to the word line assignment command.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.