Mechanisms for forming protection layer on back side of wafer
US9425084B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Oct 17, 2013 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Oct 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side. The semiconductor device structure also includes devices formed on the front side of the substrate and interconnect structures formed on the devices. The semiconductor device structure further includes a protection layer formed on the back side of the substrate, and the protection layer has a thickness over about 10 A.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.