Mechanisms for forming semiconductor device structure with feature opening
US9425094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Dec 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming a hard mask layer over the dielectric layer. The method also includes performing a plasma etching process to etch the hard mask layer to form an opening, and a gas mixture used in the plasma etching process includes a nitrogen-containing gas, a halogen-containing gas, and a carbon-containing gas. The gas mixture has a volumetric concentration of the nitrogen-containing gas in a range from about 20% to about 30%. A volumetric concentration ratio of the carbon-containing gas to the halogen-containing gas in the gas mixture is equal to about 0.3. The method further includes etching the dielectric layer through the opening in the hard mask layer to form a feature opening in the dielectric layer. The method includes forming a conductive material in the feature opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.