Semiconductor devices comprising getter layers and methods of making and using the same
US9425153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Apr 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.