Noise decoupling structure with through-substrate vias
US9425154B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Dec 19, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Jan 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.