Semiconductor memory device
US9425205B2 · kind B2 · utility
7Cited by
2References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 25, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Feb 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
Abstract
According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; and a charge storage film. The stacked body includes a plurality of electrode layers crosswise extending in a first direction and second direction crossing the first direction, the plurality of electrode layers separately stacked each other in a third direction crossing the first direction and second direction. The semiconductor body extends in the third direction and provided in the stacked body. The charge storage film is provided between the semiconductor body and the plurality of electrode layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.