Thin film transistor substrate, method of manufacturing the same, and organic light emitting diode display using the same
US9425214B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Nov 22, 2013 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Dec 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K77/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor substrate includes: a polymer substrate, an oxide transparent electrode layer (TCO) formed on the polymer substrate, a barrier layer formed on the oxide transparent electrode layer, and a semiconductor layer formed on the barrier layer, in which the semiconductor layer is polysilicon. The polysilicon thin film transistor provides an oxide transparent electrode layer (TCO) which absorbs heat energy and light generated during a process of manufacturing the polysilicon thin film transistor to prevent a damage of the substrate using a polymer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.