Manufacture method of TFT substrate and sturcture thereof
US9425223B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 11, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Nov 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a manufacture method of a TFT substrate, and the method comprises steps of: 1, deposing a first metal layer (2) on a substrate (1); 2, coating a first photoresistor layer (3) and implementing gray scal exposure; 3, removing a part of the first metal layer (2) to form a gate (21) and a source/a drain (23); 4, implementing ashing process to the first photoresistor layer (3); 5, deposing an isolation layer (4); 6, removing a part of the first photoresistor area (3) and a part of the isolation layer (4); 7, forming an oxide semiconductor layer (5); 8, deposing a protecting layer (6); 9, coating a second photoresistor layer (7) and implementing gray scal exposure; 10, removing a part of the protecting layer (6); 11, implementing ashing process to the second photoresistor layer (7); 12, deposing a transparent conducting thin film (8); 13, removing a part of second photoresistor layer (7) and a part of the transparent conducting thin film (8); 14, forming a pixel definition layer (9); 15, forming photo spacers (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.