RGBZ pixel cell unit for an RGBZ image sensor
US9425233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is described. The image sensor includes a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible light photodiodes. The unit cell having a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell having a second capacitor that is coupled to the infra-red photodiode through a transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The unit cell has a back-drain transistor coupled to the infra-red photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.