Silicon carbide semiconductor device and method for manufacturing same
US9425263B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Jul 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/57
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step of heating the silicon carbide substrate in an atmosphere of oxygen is performed. A second heating step of heating the silicon carbide substrate to a temperature of 1300° C. or more and 1500° C. or less in an atmosphere of gas containing nitrogen atoms or phosphorus atoms is performed after the first heating step. A third heating step of heating the silicon carbide substrate in an atmosphere of a first inert gas is performed after the second heating step. Thus, the silicon carbide semiconductor device in which threshold voltage variation is small, and a method for manufacturing the same can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.