Patent · US Active

Thin-film transistor and process for manufacture of the thin-film transistor

US9425321B2 · kind B2 · utility

0Cited by

9References

8Claims

0Family size

Assignee

UNIVERSITAT STUTTGART · DE

Inventors

Marcus Herrmann · Neuffen, DE
Norbert Fruehauf · Sindelfingen, DE

Key dates

Filing date	Oct 16, 2014
Grant date	Aug 23, 2016
Priority date	—
Expiry date	Oct 16, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D99/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.