Photo active layer by silicon quantum dot and the fabrication method thereof
US9425336B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Jan 11, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
Abstract
Provided is a photo active layer for a solar cell or a light emitting diode and a fabricating method thereof. The photo active layer is formed by alternately stacking silicon quantum dot layers in which a plurality of silicon quantum dots containing conductive type impurities are formed in a medium, which is a silicon compound, and conductive layers, which are polycrystalline silicon layers, containing the same conductive type impurities as those of the silicon quantum dots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.