Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device
US9425348B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 22, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Oct 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
Abstract
In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.