Light emitting diode
US9425359B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Dec 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.