Patent · US Active

Rare earth oxyorthosilicate scintillation crystals

US9428843B2 · kind B2 · utility

8Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 28, 2014
Grant dateAug 30, 2016
Priority date
Expiry dateJul 20, 2034

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B33/08
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The use of the effect of crystallographic axis orientation on the effectiveness in annealing in multiple atmospheres and chemical compositions of lutetium oxyorthosilicate crystals and other scintillator crystals is disclosed. By controlling axis orientation an favorable annealing condition can be selected to repair both internal interstitial and vacancy defects through the crystal lattice. Axis orientation can be further utilized to control the uniformity of surface finish of chemically etched crystal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.