Silicon-based rib-waveguide modulator and fabrication method thereof
US9429776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Jun 30, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/212
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Various structures of an electro-optic device and fabrication methods thereof are described. A fabrication method is provided to fabricate an electro-optic device which may include a silicon-based rib-waveguide modulator which includes a first top silicon layer, having a first doped region that is at least partially doped with dopants of a first conducting type, a second top silicon layer, having a second doped region that is at least partially doped with dopants of a second conducting type, and a thin dielectric gate layer disposed between the first top silicon layer and the second top silicon layer. The second doped region may be at least in part directly over the first doped region. The modulator may also include a rib waveguide formed on the second top silicon layer, a first electric contact formed on the first top silicon layer, and a second electric contact formed on the second top silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.