Band-gap reference circuit for biasing an RF device
US9429975B2 · kind B2 · utility
2Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Jun 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/0408
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature is described herein. The various embodiments of the voltage reference circuit described here can be used to provide precision voltage to bias a RF device. The voltage reference circuit can be provided on the same die as the RF device. The various embodiments described herein can be implemented in a GaAs material system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.