Method for simulating the electrical behaviour of an integrated diode and corresponding computerized system
US9430592B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2012 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Jul 2, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for simulating, in an electrical device simulator, electrical behavior of an integrated diode is described. The diode is modelled using a compact model in the electrical device simulator to determine the electrical behavior of the diode in a given situation. The modelling includes modelling a series resistance relating to the active regions and to the connections, modelling a PN junction of the diode, and modelling a well resistance for positive values of a current passing through the diode involving a conductivity modulation model. The method further includes modelling of the well resistance for negative values of the current by a curve which increases steeply from an initial resistance value corresponding to a zero value of current up to a plateau.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.