Method for photodepositing a particle on a graphene-semiconductor hybrid panel and a semiconductor structure
US9431258B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Mar 24, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for photodepositing a particle on a graphene-semiconductor hybrid panel is disclosed. The method for photodepositing the particle on the graphene-semiconductor includes providing a graphene-semiconductor hybrid panel, dipping the graphene-semiconductor hybrid panel in a fluid containing a precursor, and irradiating the graphene-semiconductor hybrid panel using a light source until the precursor has been reduced or oxidized to form a particle photodeposited on a surface of a graphene sheet. The graphene-semiconductor hybrid panel includes a semiconductor substrate and the graphene sheet adhered to the semiconductor substrate. The light source has an energy equal to or higher than a band gap of the semiconductor substrate. As such, the particle can be directly deposited on the surface of the graphene sheet without the need of modifying the graphene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.