Removal of defects by in-situ etching during chemical-mechanical polishing processing
US9431261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2014 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Dec 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/308
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Technologies for a process used to reduce the height of a raised profile of a device. One or more raised profiles on one or more layers of a device are removed using a combined chemical-mechanical polishing/etching process. In some implementations, a protective layer is applied to a top layer of a device grown on a substrate. A combined chemical-mechanical polishing/etching process may commence whereby one or more raised profiles of the protective layer are removed through a planarization process, exposing at least a portion of a raised profile of a layer below the protective layer. Material may be removed using an etchant to reduce the height of the raised profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.