Patent · US Active

Electrostatic discharge protection

US9431387B2 · kind B2 · utility

0Cited by

3References

17Claims

0Family size

Assignee

DNAe Group Holdings Limited · GB

Inventors

David P. Garner · Lexington, US
Hua Bai · Knoxville, US

Key dates

Filing date	Nov 10, 2015
Grant date	Aug 30, 2016
Priority date	—
Expiry date	Nov 10, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/921
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A device comprising an electrostatic discharge protection structure, an ion sensitive field effect transistor (ISFET) having a floating gate, and a sensing layer located above the floating gate. The device is configured such that the electrical impedance from the sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from the sensing layer to the floating gate. The device can be fabricated in a standard CMOS process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.