Vertical memory devices and methods of manufacturing the same
US9431414B2 · kind B2 · utility
79Cited by
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12Claims
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Key dates
| Filing date | Oct 17, 2014 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Nov 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
Nonvolatile memory devices include at least four cylindrical-shaped channel regions, which extend vertically from portions of a substrate located at respective vertices of at least one rhomboid when viewed in a vertical direction relative to a surface of the substrate. A charge storage layer (e.g., ONO layer) is provided on an outer sidewall of each of the cylindrical-shaped channel regions. In addition, to achieve a high degree of integration, a plurality of vertically-stacked gate electrodes are provided, which extend adjacent each of the cylindrical-shaped channel regions.
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