Enhancement mode high electron mobility transistor

US9431527B1 · kind B1 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Xiaorong Luo · Chengdu, CN
• Jiayun Xiong · Chengdu, CN
• Chao Yang · Houston, US
• Jie Wei · Chengdu, CN
• Junfeng Wu · 安丰镇, CN
• Fu-Sheng Peng · Chengdu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Dec 27, 2015
• Grant date: Aug 30, 2016
• Expiry date: Dec 27, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

An enhancement mode HEMT, including: a substrate layer; a buffer layer; barrier layers; drain electrodes; reverse polarization semiconductor layers; source electrodes; an insulated gate dielectric; and a metal gate electrode The buffer layer is disposed on the substrate layer, and the barrier layers are disposed on the buffer layer. Interfaces between the buffer layer and the barrier layers are provided with first heterojunctions having a two-dimensional electron gas (2DEG) channel. The drain electrodes are disposed at one end of the upper surfaces of the barrier layers and form Ohmic contact with the barrier layers. The reverse polarization semiconductor layers are disposed on the upper surfaces of the barrier layers and are able to produce inversed polarization with the barrier layers. The interfaces between reverse polarization semiconductor layers and barrier layers are provided with second heterojunctions having two-dimensional hole gas (2DHG).