Polysilicon thin-film transistor array substrate and method for preparing the same, and display device
US9431544B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 25, 2014 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Nov 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a polysilicon thin-film transistor array substrate and a method for preparing the same, and a display device, wherein the method comprises a step of forming a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode of the polysilicon thin-film transistor, and a first electrode and a second electrode of a storage capacitor, and a gate line and a data line, wherein, the semiconductor layer and the first electrode of the storage capacitor are formed via a one-time patterning process, and the gate electrode, the gate line and the second electrode of the storage capacitor are formed via a one-time patterning process. By the solution of the invention, the number of mask plates used can be lowered, so that the process can be simplified, and the production cost can be lowered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.