Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture
US9431565B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Oct 23, 2014 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Nov 8, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
An opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a dielectric layer in contact with the gate electrode layer, and a working media layer that is photo-sensitive deposited on the dielectric layer. The working media layer may provide one or more layers of one or more materials where each of the one or more layers is an atomic layer. The sensor may also include side electrodes in contact with the working media layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.