Patent · US Active

Micromechanical inertial sensor and method for manufacturing same

US9434606B2 · kind B2 · utility

1Cited by

0References

5Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Johannes Classen · Reutlingen, DE
Mirko Hattass · Stuttgart, DE
Daniel Christoph Meisel · Pittsburgh, US

Key dates

Filing date	May 9, 2013
Grant date	Sep 6, 2016
Priority date	—
Expiry date	Dec 3, 2033

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81B2201/025
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A micromechanical inertial sensor includes an ASIC element having a processed front side, an MEMS element having a micromechanical sensor structure, and a cap wafer mounted above the micromechanical sensor structure, which sensor structure includes a seismic mass and extends over the entire thickness of the MEMS substrate. The MEMS element is mounted on the processed front side of the ASIC element above a standoff structure and is electrically connected to the ASIC element via through-contacts in the MEMS substrate and in adjacent supports of the standoff structure. A blind hole is formed in the MEMS substrate in the area of the seismic mass, which blind hole is filled with the same electrically conductive material as the through-contacts, the conductive material having a greater density than the MEMS substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.