Method for producing Cu-Ga alloy powder, Cu-Ga alloy powder, method for producing Cu-Ga alloy sputtering target, and Cu-Ga alloy sputtering target
US9435023B2 · kind B2 · utility
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Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Oct 23, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.