Arrangement for manufacturing crystalline silicon ingots
US9435052B2 · kind B2 · utility
1Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2012 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Feb 9, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to an arrangement for manufacturing crystalline silicon ingots by directional solidification, where the melt and carbonaceous structural parts of the crystallization furnace is protected from the fumes of the melt by applying a gas conduit which leads the fumes directly out of the directional solidification compartment of the furnace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.