Patent · US Active

Multi-bit magnetic memory cell

US9435867B2 · kind B2 · utility

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0References
8Claims
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Assignee

Inventors

Key dates

Filing dateOct 20, 2015
Grant dateSep 6, 2016
Priority date
Expiry dateOct 20, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/5607
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Apparatus includes a first Hall sensor having a first terminal, a second terminal, a third terminal and a fourth terminal and a second Hall sensor having a fifth terminal, a sixth terminal, a seventh terminal and an eighth terminal. A conductor connects the third terminal to the fifth terminal. A processor is configured to measure a first potential between the fourth terminal and the sixth terminal while transferring a first current from the first terminal to the seventh terminal via the conductor, to measure a second potential between the first terminal and the seventh terminal while transferring a second current from the fourth terminal to the sixth terminal via the conductor, and to determine a resultant voltage generated by the first and second Hall sensors in response to the first and second potentials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.