Method for manufacturing a waveguide including a semi-conducting junction
US9435951B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Nov 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part (21, 221) to form a semiconducting junction (23, 223) in the first part (21, 221), and partially etching the semiconducting layer (20, 200) to form the waveguide (40, 240) in the first part (21, 221), the protection of the first part (21, 221) being used so that the semiconducting junction (23, 223) is included in the waveguide (40, 240).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.