Supercritical drying method for semiconductor substrate
US9437416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2011 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Apr 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67034
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.