Methods for integrating lead and graphene growth and devices formed therefrom
US9437425B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 10, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Jan 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming integrated graphite-based structures with interconnections between leads and graphene layers are provided. A substrate is patterned to form a plurality of elements on the substrate. A trench separates a first element from an adjacent element in the plurality of elements. A lead is deposited on a side wall of the first element, and a layer from the top of the first element is removed to expose a portion of the lead. Both the deposition of the lead and removal of a layer from the top of the first element are conducted before generation of graphene layers on the top of the first element and the bottom of the trench. Thus, an integrated graphite-based structure having spatially isolated but electrically connected graphene layers is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.