Method of manufacturing imaging device
US9437651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Mar 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
One portion of a first insulator film, which is positioned on a second semiconductor region, and another portion of the first insulator film, which is positioned on a third semiconductor region, are removed, while a first portion of the first insulator film, which is positioned on a first semiconductor region is remained, one portion of a second insulator film, which is positioned on the first semiconductor region, and another portion of the second insulator film, which is positioned on the second semiconductor region, are removed, while a second portion of the second insulator film, which is positioned on the third semiconductor region is remained, and a metal film that covers the first portion, the second semiconductor region, and the second portion, and the second semiconductor region are caused to react with each other and a metal compound layer is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.