Semiconductor device
US9437672B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2013 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Oct 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes: a first semiconductor layer of a nitride semiconductor formed on a substrate; a second semiconductor layer of a nitride semiconductor formed on the first semiconductor layer; and a gate electrode, a source electrode, a drain electrode, and a hole extraction electrode, each of which is formed on the second semiconductor layer, wherein between the source electrode and the hole extraction electrode or in a region right under the source electrode, the first semiconductor layer and the second semiconductor layer form a vertical interface approximately perpendicular to a surface of the substrate, and a surface of the first semiconductor layer configured to form the vertical interface is an N-polar surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.