Insulating trench forming method
US9437674B2 · kind B2 · utility
1Cited by
2References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Mar 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an insulating trench including the successive steps of: a) forming, on a semiconductor substrate, a first masking structure including a layer of a first selectively-etchable material and etching a trench into the substrate; b) forming an insulating coating on the trench walls and filling the trench with doped polysilicon; c) forming a silicon oxide plug penetrating into the trench substantially all the way to the upper surface of the substrate and protruding above the upper surface of the substrate; and d) removing the layer of the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.