Germanium metal-contact-free near-IR photodetector

US9437759B2 · kind B2 · utility

Assignee

• Coriant Advanced Technology, LLC · US

Inventors

• Thomas Wetteland Baehr-Jones · Arcadia, US
• Yi Zhang · Pasadena, US
• Michael J. Hochberg · New York, US
• Ari Novack · New York, US

Key dates

• Filing date: Mar 10, 2015
• Grant date: Sep 6, 2016
• Expiry date: Mar 10, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.